Transflective liquid crystal display device and fabricating method thereof

ABSTRACT

An array substrate for a transflective liquid crystal display device includes: a gate line on a substrate; a data line crossing the gate line, the gate line and the data line defining a pixel region having a transmissive portion and a reflective portion; a gate electrode connected to the gate line; source and drain electrode spaced apart from each other over the gate electrode, the source and drain electrode being spaced apart from each other, the source electrode being connected to the data line; a reflective layer having the same layer as the source and drain electrodes, the reflective layer being disposed in the pixel region and having a transmissive hole corresponding to the transmissive portion; and a pixel electrode connected to the drain electrode, the pixel electrode being disposed in the pixel region, wherein the source and drain electrodes and the reflective layer have multiple layers of metal, wherein a top layer of the multiple layers includes a reflective metallic material.

[0001] This application claims the benefit of Korean Patent ApplicationNo. 2002-41289, filed on Jul. 15, 2002, which is hereby incorporated byreference for all purposes as if fully set forth herein.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a liquid crystal display device,and more particularly to a transflective liquid crystal display deviceand a fabricating method thereof by using a reduced number of masks.

[0004] 2. Discussion of the Related Art

[0005] Liquid crystal display (LCD) devices are developed as nextgeneration display devices because of their characteristics of lightweight, thin profile, and low power consumption.

[0006] In general, an LCD device is a non-emissive display device thatdisplays images utilizing optical anisotropy properties of liquidcrystal materials that are interposed between a thin film transistor(TFT) array substrate and a color filter (C/F) substrate. Presently,among the various type of LCD devices commonly used, active matrix LCD(AM-LCD) devices in which thin film transistors (TFTs) are disposed in amatrix for each pixel region have been developed because of their highresolution and superiority in displaying moving images.

[0007]FIG. 1 is a schematic cross-sectional view of a liquid crystaldisplay device according to the related art.

[0008] In FIG. 1, first and second substrates 2 and 4 are spaced apartand facing each other, and a liquid crystal layer 6 is interposedtherebetween. A gate electrode 8 is formed on an inner surface of thesecond substrate 4 and a gate insulating layer 9 is formed on the gateelectrode 8. A semiconductor layer 11 including an active layer 11 a andan ohmic contact layer 11 b is formed on the gate insulating layer 9over the gate electrode 8. Source and drain electrodes 13 and 15 areformed on the semiconductor layer 11. The source and drain electrodes 13and 15 are spaced apart from each other, and the active layer 11 acorresponding to a space between the source and drain electrodes 13 and15 functions as a channel “ch.” The gate electrode 8, the semiconductorlayer 11, and the source and drain electrodes 13 and 15 constitute athin film transistor (TFT) “T.” Even though not shown in FIG. 1, a gateline connected to the gate electrode 8 is formed along a first directionand a data line connected to the source electrode 13 is disposed along asecond direction crossing the first direction. A pixel region “P” isdefined by a cross of the gate line and the data line. A passivationlayer 19 including a drain contact hole 17 is formed on the TFT “T” anda pixel electrode 21 connected to the drain electrode 15 through thedrain contact hole 17 is formed in the pixel region “P.”

[0009] A color filter layer 23 corresponding to the pixel electrode 21is formed on an inner surface of the first substrate 2. The color filterlayer transmits only light of a specific wavelength. A black matrix 27is formed at a border between the adjacent color filter layers 23 toprevent a light leakage and an inflow of ambient light into the TFT “T.”A common electrode 29 is formed on the color filter layer 23 and theblack matrix 27 to apply a voltage to the liquid crystal layer 6. Toprevent a leakage of the liquid crystal layer 6, a peripheral portion ofthe first and second substrates 2 and 4 is sealed with a seal pattern31. A spacer 33 is disposed between the first and second substrates 2and 4 to keep a uniform cell gap with the seal pattern 31. A firstorientation film (not shown) can be formed between the common electrode29 and the liquid crystal layer 6, and a second orientation film (notshown) can be formed between the liquid crystal layer 6 and the pixelelectrode 21 to induce an alignment of the liquid crystal layer 6.

[0010] Even though not shown in FIG. 1, the LCD device includes abacklight unit under the second substrate 4 as a light source. However,the incident light from the backlight unit is attenuated during thetransmission so that the actual transmittance is only about 7%.Accordingly, the backlight unit of the LCD device requires highbrightness, thereby increasing power consumption by the backlight unit.Thus, a relatively heavy battery is required to supply a sufficientpower to the backlight unit of such a device, and the battery cannot beused outdoors for a long period of time because of the increased powerrequirements.

[0011] In order to overcome the problems described above, a reflectiveLCD device and a transflective LCD device have been developed. Thereflective LCD device uses the ambient light instead of light from thebacklight unit, and thus it is light weight and easy to carry. Inaddition, power consumption of the reflective LCD device is reduced sothat the reflective LCD device can be used for a portable display devicesuch as an electronic diary or a personal digital assistant (PDA). Inthe reflective and transflective LCD devices, a reflective layer of ametallic material having a high reflectance is formed in a pixel region.The reflective layer can be formed in the pixel region over or under atransmissive electrode. More recently, the transmissive electrode isformed over the reflective layer to induce an alignment of the liquidcrystal layer easily. Even with this structure, a transflective LCDhaving a multiple-layered insulating layer is suggested for protectionof the reflective layer and to prevent an electrical short between thetransmissive electrode and the reflective layer.

[0012]FIGS. 2A to 2G are schematic cross-sectional views showing afabricating process of a display region of an array substrate for atransflective liquid crystal display device including a multiple-layeredinsulating layer according to the related art, and FIGS. 3A to 3G areschematic cross-sectional views showing a fabricating process of anon-display region of an array substrate for a transflective liquidcrystal display device including a multiple-layered insulating layeraccording to the related art. Patterns on the array substrate are formedthrough a mask process including a deposition, a coating, aphotolithography and an etching, and figures are shown according to anumber of the mask process.

[0013] In FIGS. 2A and 3A, a gate electrode 10 and a first align key 12of a first metallic material are formed on a substrate 4 through a firstmask process.

[0014] In FIGS. 2B and 3B, after a gate insulating layer 14 of a firstinsulating material is formed on the gate electrode 10 and the firstalign key 12, a semiconductor layer 16 including an active layer 16 a ofamorphous silicon (a-Si) and an ohmic contact layer 16 b ofimpurity-doped amorphous silicon (n+ a-Si) is formed on the gateinsulating layer 14 over the gate electrode 10 through a second maskprocess.

[0015] In FIGS. 2C and 3C, source and drain electrodes 18 and 22 of asecond metallic material are formed on the semiconductor layer 16through a third mask process. The source and drain electrodes 18 and 22are spaced apart from each other. At the same time, a data line 20connected to the source electrode 18 is formed on the gate insulatinglayer 14, and a second align key 24 is formed on the gate insulatinglayer 14 over the first align key 12. The gate electrode 10, thesemiconductor layer 16, and source and drain electrodes 18 and 22constitute a thin film transistor (TFT) “T.”

[0016] In FIGS. 2D and 3D, after first, second and third passivationlayers 25, 26 and 28 are sequentially formed on the TFT “T” and thesecond align key 24, a first open portion 30 exposing the second alignkey 24 is formed in the first, second and third passivation layers 25,26 and 28 through a fourth mask process. The first open portion 30 isfor preventing the second align key 24 from being screened by therelatively thick second passivation layer 26. Thus, a mask for thefourth mask process can have a simpler structure than that of theprevious first to third mask processes.

[0017] In FIGS. 2E and 3E, a reflective layer 32 of a third metallicmaterial having a high reflectance is formed on the third passivationlayer 28 over the TFT “T” through a fifth mask process. The reflectivelayer 32 has a second open portion 34 exposing the third passivationlayer 28. In this step of forming the reflective layer 32, the secondalign key 24 is used for the fifth mask process. The first and thirdpassivation layers 25 and 28 are made of silicon nitride (SiNx), and thesecond passivation layer 26 is made of benzocyclobutene (BCB). The firstpassivation layer 25 is formed to improve an electrical property of theTFT “T.” The second passivation layer 26 is formed to reduce anelectrical interference between the reflective layer 32 and atransmissive electrode (not shown). The third passivation layer 28 isformed to improve a contact property between the second passivationlayer 26 and the reflective layer 32.

[0018] In FIGS. 2F and 3F, after a fourth passivation layer 36 is formedon the reflective layer 32 and the second align key 24, a drain contacthole 38 exposing the drain electrode 22 is formed in the first to fourthpassivation layers 25, 26, 28 and 36 corresponding to the second openportion 34 through a sixth mask process. The fourth passivation layer 36is made of the same material as the first and second passivation layers25 and 28. The fourth passivation layer 36 is formed to prevent theGalvanic phenomenon (a corrosion phenomenon) between the reflectivelayer 32 and the transmissive electrode (not shown).

[0019] In FIGS. 2G and 3G, a transmissive electrode 40 of a transparentconductive material is formed on the fourth passivation layer 36 in apixel region “P” through a seventh mask process. The transmissiveelectrode 40 is connected to the drain electrode 22 through the draincontact hole 38. The pixel region “P” includes a reflective portioncorresponding to the reflective layer 32 and a transmissive portion.Images are displayed by using an ambient light in the reflectiveportion, while images are displayed by using light from the backlightunit (not shown) in the transmissive portion.

[0020] As shown in FIGS. 2A to 2G and FIGS. 3A to 3G, an array substratefor a transflective LCD device is formed through seven mask processesincluding a gate process, a semiconductor layer process, a data process,a reflective layer process, an align key open process, a contact holeprocess and a transmissive electrode process. Thus, the process of anarray substrate for a transflective LCD device has more fabricationsteps than that for a transmissive LCD device, and chemical and/orphysical processes are repeated in the mask process. Therefore, as thefabrication steps increase, a fabrication cost and a possibility ofdamages to the device also increase.

SUMMARY OF THE INVENTION

[0021] Accordingly, the present invention is directed to a liquidcrystal display device that substantially obviates one or more of theproblems due to limitations and disadvantages of the related art.

[0022] An advantage of the present invention is to provide atransflective liquid crystal display device whose production yield isimproved by reducing the number of mask processes.

[0023] An advantage of the present invention is to provide an arraysubstrate for a transflective liquid crystal display device where sourceand drain electrodes has multiple layers of metallic material and anadditional reflective layer is omitted.

[0024] Additional features and advantages of the invention will be setforth in the description which follows, and in part will be apparentfrom the description, or may be learned by practice of the invention.These and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

[0025] To achieve these and other advantages and in accordance with thepurpose of the present invention, as embodied and broadly described, anarray substrate for a transflective liquid crystal display device may,for example, include a gate line on a substrate; a data line crossingthe gate line, the gate line and the data line defining a pixel regionhaving a transmissive portion and a reflective portion; a gate electrodeconnected to the gate line; source and drain electrode spaced apart fromeach other over the gate electrode, the source electrode being connectedto the data line; a reflective layer having the same layer as the sourceand drain electrodes, the reflective layer being disposed in the pixelregion and having a transmissive hole corresponding to the transmissiveportion; and a pixel electrode connected to the drain electrode, thepixel electrode being disposed in the pixel region, wherein the sourceand drain electrodes and the reflective layer have multiple layers ofmetal, wherein a top layer of the multiple layers includes a reflectivemetallic material.

[0026] In another aspect of the present invention, a method offabricating an array substrate for a transflective liquid crystaldisplay device may, for example, include forming a gate electrode and agate line on a substrate through a first mask process; forming a firstinsulating layer on the gate electrode and the gate line; forming asemiconductor layer on the first insulating layer over the gateelectrode through a second mask process; forming source and drainelectrodes on the semiconductor layer, a data line crossing the gateline, and a reflective layer on the first insulating layer through athird mask process, the source and drain electrodes being spaced apartfrom each other, the source electrode being connected to the data line,the gate line and the data line defining a pixel region having atransmissive portion and a reflective portion, the reflective layerbeing disposed in the pixel region and having a transmissive holecorresponding to the transmissive portion, the source and drainelectrodes, the data line and the reflective layer having multiplelayers of metal, a top layer of the multiple layers including areflective metallic material; forming second insulating layer on thesource and drain electrodes, the data line and the reflective layerthrough a fourth mask process, the second insulating layer having adrain contact hole exposing the drain electrode; and forming a pixelelectrode on the third insulating layer through a fifth mask process,the pixel electrode including a transparent conductive material, thepixel electrode being connected to the drain electrode through the draincontact hole.

[0027] In yet another aspect of the present invention, a method offabricating an array substrate for a transflective liquid crystaldisplay device may, for example, include forming a gate electrode and agate line on a substrate; forming a first insulating layer on the gateelectrode and the gate line; forming a semiconductor layer on the firstinsulating layer, the semiconductor layer having an active layer and anohmic contact layer; forming source and drain electrodes, a data lineand a reflective layer having multiple layers on the first insulatinglayer at the same time, wherein the gate line and the data line definesa pixel region having a transmissive portion and a reflective portion,forming a pixel electrode of a transparent conductive materialelectrically connected to the drain electrode.

[0028] It is to be understood that both the foregoing generaldescription and the following detailed description are exemplary andexplanatory and are intended to provide further explanation of theinvention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings, which are included to provide afurther understanding of the invention and are incorporated in andconstitute a part of this specification, illustrate embodiments of theinvention and together with the description serve to explain theprinciples of the invention.

[0030] In the drawings:

[0031]FIG. 1 is a schematic cross-sectional view of a liquid crystaldisplay device according to the related art;

[0032]FIGS. 2A to 2G are schematic cross-sectional views showing afabricating process of a display region of an array substrate for atransflective liquid crystal display device including a multiple-layeredinsulating layer according to the related art;

[0033]FIGS. 3A to 3G are schematic cross-sectional views showing afabricating process of a non-display region of an array substrate for atransflective liquid crystal display device including a multiple-layeredinsulating layer according to the related art;

[0034]FIG. 4 is a schematic plane view of a liquid crystal displaydevice according to an embodiment of the present invention;

[0035]FIGS. 5A to 5G are schematic cross-sectional views showing afabricating process of a display region of an array substrate for atransflective liquid crystal display device according to an embodimentof the present invention; and

[0036]FIGS. 6A to 6G are schematic cross-sectional views showing afabricating process of a non-display region of an array substrate for atransflective liquid crystal display device according to an embodimentof the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

[0037] Reference will now be made in detail to embodiments of thepresent invention, example of which is illustrated in the accompanyingdrawings. Wherever possible, similar reference numbers will be usedthroughout the drawings to refer to the same or like parts.

[0038]FIG. 4 is a schematic plane view of a liquid crystal displaydevice according to an embodiment of the present invention.

[0039] In FIG. 4, a gate line 111 and a data line 120 are formed tocross each other and define a pixel region “P.” A gate electrode 110extends from the gate line 111. A semiconductor layer 116 is formed overthe gate electrode 110. Source and drain electrodes 118 and 122 arespaced apart from each other and overlap the gate electrode 110 and thesemiconductor layer 116. The source electrode 118 extends from the dataline 120. The gate electrode 110, the semiconductor layer 116 and thesource and drain electrodes 118 and 122 constitute a thin filmtransistor (TFT) “T.” A reflective layer 124 having a transmissive hole123 is formed in the pixel region “P” at the same layer as the data line120. A pixel electrode 136 connected to the drain electrode 122 througha drain contact hole 132 is formed in the pixel region “P.” The pixelregion “P” includes a transmissive portion corresponding to thetransmissive hole 123 and a reflective portion corresponding to thereflective layer 124. The data line 120, and the source and drainelectrodes 118 and 122 have multiple layers whose top layer is made of ametallic material having a high reflectance. Accordingly, the reflectivelayer 124 can be simultaneously formed with the data line 120, and thesource and drain electrodes 118 and 122, which results in a reducednumber of the mask processes.

[0040] Since the data line 120 has the same layer as the reflectivelayer 124, the data line 120 and the reflective layer 124 are spacedapart from each other by a distance of about 5 μm to about 7 μm toprevent an electrical short therebetween. Moreover, a first capacitorelectrode 113 extends from the gate line 111 and a second capacitorelectrode 121 is formed over the first capacitor electrode 113. Thesecond capacitor electrode 121 may be formed at the same layer as thedata line 120, and a first insulating layer (not shown) is interposedbetween the first and second capacitor electrodes 113 and 121. The pixelelectrode 136 is connected to the second capacitor electrode through acapacitor contact hole 125 in a second insulating layer (not shown).Accordingly, the first and second capacitor electrodes 113 and 121, andthe first insulating layer constitute a storage capacitor “C_(ST)”connected to the TFT “T.”

[0041]FIGS. 5A to 5G are schematic cross-sectional views showing afabricating process of a display region of an array substrate for atransflective liquid crystal display device according to an embodimentof the present invention, and FIGS. 6A to 6G are schematiccross-sectional views showing a fabricating process of a non-displayregion of an array substrate for a transflective liquid crystal displaydevice according to an embodiment of the present invention.

[0042] In FIGS. 5A and 6A, a gate electrode 110 and a first align key112 of a first metallic material are formed on a substrate 100 through afirst mask process.

[0043] In FIGS. 5B and 6B, after a gate insulating layer 114 of a firstinsulating material is formed on the gate electrode 110 and the firstalign key 112, a semiconductor layer 116 including an active layer 116 aof amorphous silicon (a-Si) and an ohmic contact layer 116 b ofimpurity-doped amorphous silicon (n+ a-Si) is formed on the gateinsulating layer 114 over the gate electrode 110 through a second maskprocess. The first insulating material can be made of a siliconinsulating material such as silicon nitride (SiNx).

[0044] In FIGS. 5C and 6C, source and drain electrodes 118 and 122 of asecond metallic material are formed on the semiconductor layer 116through a third mask process. The source and drain electrodes 118 and122 are spaced apart from each other. At the same time, a data line 120connected to the source electrode 118, a reflective layer 124 and asecond align key 126 are formed on the gate insulating layer 114. Thus,the data line 120, the reflective layer 124 and the second align key 126have the same layer as the source and drain electrodes 118 and 122. Thereflective layer 124 is disposed in the pixel region “P” and the secondalign key 126 corresponds to the first align key 112. The gate electrode110, the semiconductor layer 116, and source and drain electrodes 118and 122 constitute a thin film transistor (TFT) “T.”

[0045] The data line 120 can have multiple layers in which a top layerincludes a metallic material having a high reflectance, and a bottomlayer includes a metallic material having a high chemical corrosionresistance. For example, the top layer can include one of aluminum (Al)and aluminum (Al) alloy such as aluminum neodymium (AlNd) and the bottomlayer can include one of molybdenum (Mo), tungsten (W), nickel (Ni) andtitanium (Ti). Therefore, the source electrode 118 includes first andsecond sub-source electrodes 118 a and 118 b. Similarly, the drainelectrode 122 includes first and second sub-drain electrodes 122 a and122 b, the data line 120 includes first and second sub-data lines 120 aand 120 b, the reflective layer 124 includes first and secondsub-reflective layers 124 a and 124 b, and the second align key 126includes first and second sub-second align keys 126 a and 126 b. Sincethe second sub-reflective layer 124 b is made of a metallic materialhaving a high reflectance, the reflective layer 124 can besimultaneously formed with the source and drain electrodes 118 and 122and the data line 120 through the third mask process.

[0046] In FIGS. 5D and 6D, after first and second passivation layers 128and 130 are sequentially formed on the TFT “T” and the second align key126, a drain contact hole 132 exposing the drain electrode 122 and anopen portion 134 exposing the second align key 126 are formed in thefirst and second passivation layers 128 and 130 through a fourth maskprocess. The first passivation layer 128 includes one of an inorganicinsulating material group and the second passivation layer 130 includesone of an organic insulating material group having a low dielectricconstant. For example, the first and second passivation layers 128 and130 can be made of a silicon insulating material and benzocyclobutene(BCB), respectively. The open portion is formed through an additionalmask process in the related art. In this embodiment, however, since thereflective layer 124 is simultaneously formed with the source and drainelectrodes 118 and 122 through the third mask process, the open portion134 can be formed through the fourth mask process of forming the draincontact hole 132. Accordingly, the additional mask process of formingthe open portion can be omitted.

[0047] In FIGS. 5E and 6E, a pixel electrode 136 of a transparentconductive material is formed on the second passivation layer 130 in apixel region “P” through a fifth mask process. The pixel electrode 136is connected to the drain electrode 122 through the drain contact hole132. The pixel region “P” includes a reflective portion corresponding tothe reflective layer 124 and a transmissive portion corresponding to thetransmissive hole 123. Images are displayed by using an ambient light inthe reflective portion, while images are displayed by using light fromthe backlight unit (not shown) in the transmissive portion.

[0048] Consequently, since a reflective layer, a data line, source anddrain electrodes and an align key are simultaneously formed to havemultiple layers whose top layer includes a metallic material having ahigh reflectance, an additional mask process for the align key can beeliminated. Therefore, a high production yield and a low production costcan be obtained.

[0049] It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present inventionwithout departing from the spirit or scope of the invention. Thus, it isintended that the present invention cover the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

What is claimed is:
 1. An array substrate for a transflective liquidcrystal display device, comprising: a gate line on a substrate; a dataline crossing the gate line, the gate line and the data line defining apixel region having a transmissive portion and a reflective portion; agate electrode connected to the gate line; source and drain electrodespaced apart from each other over the gate electrode, the sourceelectrode being connected to the data line; a reflective layer at thesame layer as the source and drain electrodes, the reflective layerbeing disposed in the pixel region and having a transmissive holecorresponding to the transmissive portion; and a pixel electrodeconnected to the drain electrode, the pixel electrode being disposed inthe pixel region, wherein the source and drain electrodes and thereflective layer have multiple layers of metal, wherein a top layer ofthe multiple layers includes a reflective metallic material.
 2. Thearray substrate according to claim 1, wherein the reflective metallicmaterial is a metal including aluminum (Al).
 3. The array substrateaccording to claim 2, wherein the metal is aluminum-neodymium (AlNd). 4.The array substrate according to claim 1, wherein the data line and thereflective layer are spaced apart from each other by a distance of about5 μm to about 7 μm.
 5. The array substrate according to claim 1, furthercomprising first to third insulating layers and a semiconductor layer,wherein the first insulating layer is formed on the gate electrode andthe gate line, wherein the semiconductor layer is formed on the firstinsulating layer, wherein the second and third insulating layers aresequentially formed on the source and drain electrodes and thereflective layer, and wherein the second and third insulating layershave a drain contact hole exposing the drain electrode.
 6. The arraysubstrate according to claim 5, further comprising first and secondcapacitor electrodes, wherein the first capacitor electrode has the samelayer as the gate line, wherein the second capacitor electrode has thesame layer as the data line, wherein the second capacitor electrodeoverlaps the first capacitor electrode.
 7. The array substrate accordingto claim 6, wherein the first insulating layer is interposed between thefirst and second capacitor electrodes, wherein the second capacitorelectrode is connected to the pixel electrode through a capacitorcontact hole in the second and third insulating layers.
 8. A method offabricating an array substrate for a transflective liquid crystaldisplay device, comprising: forming a gate electrode and a gate line ona substrate through a first mask process; forming a first insulatinglayer on the gate electrode and the gate line; forming a semiconductorlayer on the first insulating layer over the gate electrode through asecond mask process; forming source and drain electrodes on thesemiconductor layer, a data line crossing the gate line, and areflective layer on the first insulating layer through a third maskprocess, the source and drain electrodes being spaced apart from eachother, the source electrode being connected to the data line, the gateline and the data line defining a pixel region having a transmissiveportion and a reflective portion, the reflective layer being disposed inthe pixel region and having a transmissive hole corresponding to thetransmissive portion, the source and drain electrodes, the data line andthe reflective layer having multiple layers of metal, a top layer of themultiple layers including a reflective metallic material; forming secondinsulating layer on the source and drain electrodes, the data line andthe reflective layer through a fourth mask process, the secondinsulating layer having a drain contact hole exposing the drainelectrode; and forming a pixel electrode on the third insulating layerthrough a fifth mask process, the pixel electrode including atransparent conductive material, the pixel electrode being connected tothe drain electrode through the drain contact hole.
 9. The methodaccording to claim 1, further comprising: forming a first align key in anon-display region of the substrate through the third mask process; andforming the second insulating layer on the first align key through thefourth mask process, the second insulating layer having an open portionexposing the first align key.
 10. The method according to claim 9,further comprising forming a second align key on the substrate throughthe first mask process, wherein the second align key corresponds to thefirst align key.
 11. The method according to claim 8, wherein the dataline and the reflective layer are spaced apart from each other by adistance of about 5 μm to about 7 μm.
 12. The method according to claim8, further comprising forming first and second capacitor electrodes,wherein the first capacitor electrode is formed on the substrate throughthe first mask process, wherein the second capacitor electrode is formedon the first insulating layer through the third mask process andoverlaps the first capacitor electrode.
 13. The method according toclaim 12, further comprising forming a capacitor contact hole in thesecond insulating layer through the fourth mask process, wherein thecapacitor contact hole exposes the second capacitor electrode, the pixelelectrode is connected to the second capacitor electrode through thecapacitor contact hole.
 14. A method of fabricating an array substratefor a transflective liquid crystal display device, comprising: forming agate electrode and a gate line on a substrate; forming a firstinsulating layer on the gate electrode and the gate line; forming asemiconductor layer on the first insulating layer, the semiconductorlayer having an active layer and an ohmic contact layer; forming sourceand drain electrodes, a data line and a reflective layer having multiplelayers on the first insulating layer at the same time, wherein the gateline and the data line define a pixel region having a transmissiveportion and a reflective portion; and forming a pixel electrode of atransparent conductive material electrically connected to the drainelectrode.
 15. The method according to claim 14, further comprisingforming an first align key at the same time as the source and drainelectrodes, the data line and the reflective layer on the firstinsulating layer.
 16. The method according to claim 15, furthercomprising forming a second align key at the same time as the gateelectrode and the gate line, wherein the second align key corresponds tothe first align key.
 17. The method according to claim 14, furthercomprising: forming second insulating layer on the source and drainelectrodes, the data line and the reflective layer, the secondinsulating layer having a drain contact hole exposing the drainelectrode.
 18. The method according to claim 17, wherein the pixelelectrode is electrically connected to the drain electrode through thedrain contact hole.
 19. The method according to claim 14, wherein thedata line and the reflective layer are spaced apart such that the dataline and the reflective layer are electrically insulated.
 20. The methodaccording to claim 14, wherein the top layer of the reflective layer isof high reflectance and the bottom layer of the reflective layer is ofhigh chemical corrosion resistance.